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  Datasheet File OCR Text:
 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
* *
2N7372 - PNP 2N7373 - NPN
*
Power Supply Inverters and Converters General Purpose Amplifiers
FEATURES:
* * * * * * * *
Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDEC TO-254AA Package Leads can be Formed All Terminals Isolated from the Case
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages JAN/TX/TXV/JANS
DESCRIPTION:
These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped and clamped reverse energy ratings with the base to emitter reversed biased. Ultrasonically bonded wire leads and gold eutectic die bonding are utilized to permit operating temperature to 200C. The hermetically sealed package insures maximum reliability and long life. The isolated low profile package allows for easy PC board fit.
TO-254AA
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
VCBO VCEO VEBO IC IC IB T STG TJ
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from cast for 10 sec. Unclamped Inductive Load Energy
2N7372
- 100 - 80 - 5.5 5 10 2 -65 to 200 -65 to 200 300 15 58 33 3
2N7373
100 80 5.5 5 10 2
UNITS
V V V A A A
C C C
mj 58 33 3 W W
C/W
PT
Continuous Device Dissipation TC = 25 C TC = 100 C
JC
Thermal Resistance Junction to Case
MSC1343.PDF 010-29-99
2N7372 - PNP 2N7373 - NPN
ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted)
SYMBOL
VCEO ICEO ICES ICEX IEBO
CHARACTERISTIC
Collector-Emitter Breakdown Voltage Collector Cutoff Current, Base Open Collector Cutoff Current, Emitter-Base Short Collector Cutoff Current Emitter Cutoff Current
TEST CONDITIONS
IC = 100 mA, IB = 0 IB = 0, VCE = 40 V VCE = 100 V VCE = 60 V VBE = 60 V, VBE = 2 V, TC = 150 C VEB = 5.5 V, IC =0 VEB = 4.0 V, IC =0 IC = 5.0 A, VCE = 5.0 V IC = 2.5 A, VCE = 5.0 V IC = 2.5 A, VCE = 5.0 V, TC = -55 C IC = 50 mA, VCE = 5.0 V
VALUE Min. Max.
80 ------------------40 70 25 50 ---------------50 ---50 1 1 500 1 1 ---200 ------1.45 1.45 2.2 1.5 0.75 ----
Units
V
A
mA
A A
mA
A
HFE
Static Forward Current Transfer Ratio
------------V V V V -------
VBE VBE(sat) VCE(sat) HFE Ihfel COBO ton toff
Base-Emitter Volatage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Small Signal CommonEmitter Forward Current Transfer Ratio Small Signal Common Emitter Forward Current Transfer Ratio Open-Circuit Output Capacitance Turn-on Time Turn-off Time
IC = 2.5 A, VCE = 5.0 V IC = 2.5 A, IB = 0.25 A IC = 5.0 A, IB = 0.5 A IC = 5.0 A, IB = 0.5 A IC = 2.5 A, IB = 0.25 A VCE = 5.0 V, IC = 100 mA, F = 1.0 KHz
VCE = 5.0 V, IC = 0.5A, F = 10 MHz VCB = 10 V, IE = 0A, F = 0.1 MHz IC = 5.0 A, IB1 = IB2 = 0.5 A VBE (OFF) = 3.7V
7.0 ----------
---250 0.5 1.5
---pF
s s
MSC1343.PDF 010-29-99
2N7372 - PNP 2N7373 - NPN
PACKAGE MECHANICAL DATA:
JEDEC Hermetic Metal TO-254AA 3-Pin
MSC1343.PDF 010-29-99


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